Opto-electronic semiconductor element - has substrate with deposited semiconductor layers of opposite conductivity with substrate dependent pn-junction

The opto-electronic integrated semiconductor component with improved heat dissipation has semiconductor layers deposited on a substrate, forming between semiconductor material of opposite conductivity at least one pn junction. Dependent on the conductivity of the substrate the pn junction is situated in a right angle configuration directly on the substrate, or extends parallel to the substrate surface with a negligible spacing from the same. This arrangement is preferably suitable for integration of opto-electronic components on a common substrate. The substrate material may be sapphire spinell, or diamond. The arrangement is suitable typically for a semiconductor laser, connectable to an optical fibre at the region of its pn-junction.