Semiconducting photoelement with miniature metal electrode array - high sensitivity devices of cadmium sulphide or selenide

Prodn. of a miniature electrode array on chalcogen semi-conductors (pref. CdS, CdSe, CdTe, SeTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe) to give inter-electrode distances of 0.01-0.1mm and sensitivities 2-200 times better than conventional photoconductors. CdS is doped with Cu using CdCl2 as a flux and th...

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Bibliographische Detailangaben
Hauptverfasser:	HASEGAWA, TETSUO, HINO, TOKIO, KAWASHIMA, HIROKUNI, TOKIO, AMANO, SAICHIRO, YOKOHAMA, KANAGAWA, NOMURA, MASAAKI, KAWASAKI, KANAGAWA, IWAMI, NAOKI, TOKIO
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY RESONATORS RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION WAVEGUIDES
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Beschreibung
Zusammenfassung:	Prodn. of a miniature electrode array on chalcogen semi-conductors (pref. CdS, CdSe, CdTe, SeTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe) to give inter-electrode distances of 0.01-0.1mm and sensitivities 2-200 times better than conventional photoconductors. CdS is doped with Cu using CdCl2 as a flux and the milled powder is deposited on an alumina substrate and heated in nitrogen at 600 degrees C to form a layer of photoconducting matl. A photosensitive resin layer is then deposited and exposed using a glass mask with e.g. Kodak HRP (RTM). After development in trichloroethane, Sn is deposited on the substrate, after which immersion in dichloromethane removes the areas coated with resin. The result is e.g. an array of Sn electrodes with inter-electrode distance of 0.05 mm and an electrode width of 0.1 mm.