Semiconductor arrangement for memory-store elements - has two adjacent zones bedded in main material zone of opposed conductivity

The semiconductor arrangement for memory store elements is designed to combine the advantages of both static and dynamic techniques and to compensate for the discharge of storage capacities through leaks. The arrangement comprises a plate-type semiconductor crystal of one conductive type, in which t...

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Bibliographische Detailangaben

1. Verfasser:	EICHHORN,JUERGEN
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
Online-Zugang:	Volltext bestellen
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