HALBLEITERGEHAEUSE

A low parasitic microwave transistor package is provided with a pair of parallel rectangular bonding rails extending from the metal header. A first insulating body having a metal film thereon is positioned closely between the two rails and is attached to the header. A microwave transistor die may be attached to the metal film on the insulating body. A second insulating body having an aperture therein is attached to the metal base, the aperture accommodating the two bonding rails and the first insulating body positioned therebetween. The alumina disk has two metal bonding pads formed thereon. A very low inductance, low resistance connection from the emitter of a transistor to the metal base may be provided by means of a plurality of parallel stitch bonds from the emitter bonding pads on the transistor die to the bonding rails. Balanced feeding may be provided to the emitter, base and collector.