Single crystal growth - keeping seed apart from the melt during compound melt formation

Single crystal of a cpd. with a specific crystallographic orientation is formed by (a) producing a melt of the cpd. in a closed gradient freeze crystallisation system with a crucible and an oriented seed crystal spaced apart from the melt during melt synthesis and (b) after the melt has equilibrated...

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Bibliographische Detailangaben
Hauptverfasser:	MICHAEL WELLS,DAVID, GENE SCHIERDING,ROYCE
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Single crystal of a cpd. with a specific crystallographic orientation is formed by (a) producing a melt of the cpd. in a closed gradient freeze crystallisation system with a crucible and an oriented seed crystal spaced apart from the melt during melt synthesis and (b) after the melt has equilibrated, contacting it with the seed to progressively freeze out a single crystal. Pref. the material is a semiconductor cpd. esp. GaAs. By maintaining seed and melt apart during melt synthesis, the final crystal yield can improved by =120%, crystal orientation is also maintained.