Gallium melt satd. with gallium arsenide - for use as source for gas-phase epitaxy

Prepn. of Ga melt satd. with GaAs by passing over molten Ga a mixt. of AsCl3 and H2 is improved by reducing the AsCl3 feed rate as soon as a GaAs crust, which is formed on the Ga melt, reaches such a thickness that the diffusion of As into the inner of the Ga melt is hindered; the feeding of AsCl3 i...

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Hauptverfasser:	GISDAKIS, SPYRIDON., 8000 MUENCHEN, HUBER, HEINRICH, 8042 OBERSCHLEISSHEIM
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Prepn. of Ga melt satd. with GaAs by passing over molten Ga a mixt. of AsCl3 and H2 is improved by reducing the AsCl3 feed rate as soon as a GaAs crust, which is formed on the Ga melt, reaches such a thickness that the diffusion of As into the inner of the Ga melt is hindered; the feeding of AsCl3 is resumed when the GaAs crust partly dissolves in the melt so that As can again diffuse into Ga. This cycle is repeated until saturation of the melt with GaAs is reached. By this method, excessive development of the GaAs crust (which is undesirable for the gas phase epitaxy) is prevented, and saturation of Ga melt with As is accelerated.