ELEKTROLUMINESZIERENDE DIODE

A beam-leaded electroluminescent diode structure and a method of manufacture are described. The p-n junction is formed such that the junction extends to the top surface of the semiconductor crystal. Proton bombardment of the surface forms insulating regions within the crystal which passivate the p-n...

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Bibliographische Detailangaben
Hauptverfasser:	D'ASARO, LUCIAN ARTHUR, MADISON, SPITZER, STUART MARSHALL, BERKELEY HEIGHTS, KUHN, MATTHEW, WARREN
Format:	Patent
Sprache:	ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A beam-leaded electroluminescent diode structure and a method of manufacture are described. The p-n junction is formed such that the junction extends to the top surface of the semiconductor crystal. Proton bombardment of the surface forms insulating regions within the crystal which passivate the p-n junction and permit co-planar or quasiplanar connections through beam lead technology. Metal contacts which are opaque to the proton beam are used for masking during bombardment. These contacts are subsequently built up to form the beam leads.