INTERNE MODULATION EINES HALBLEITERLASERS

A semiconductor laser consists of a series of layers deposited on a substrate (S) in the form of a heterostructure diode. The substrate is mounted on a heat sink (W). The active laser zone is bounded on both sides by two differently doped semiconductor layers. The path of the current flow in the for...

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Bibliographische Detailangaben
Hauptverfasser:	RIEMANN, VOLKER., 7310 PLOCHINGEN, SPECOVIUS, JOACHIM, 4812 BRACKWEDE
Format:	Patent
Sprache:	ger
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A semiconductor laser consists of a series of layers deposited on a substrate (S) in the form of a heterostructure diode. The substrate is mounted on a heat sink (W). The active laser zone is bounded on both sides by two differently doped semiconductor layers. The path of the current flow in the forward direction of the diode is restricted to a narrow strip- shaped area of the active laser zone. The contacts (K) are fitted to the areas (D) which limit the current path in one direction. They are at right angles through the forward direction of the heterostructure diode. The contacts are connected to a control voltage source which limits the width of the current paths. PS.