Multilayer gallium arsenide semiconductor - for laser diode

Prodn. of a semiconductor diode contg. a series of epitaxially formed layers of n-GaAs - n - GaHAs - GaAs - p - GaHAs - p - GaAs is improved by forming a supernumerary layer, pref. GaAlAs, and finally etching it away, pref. with hydrochloric acid. By this method, the formation of the p - GaAs layer...

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Bibliographische Detailangaben
1. Verfasser:	RIEMANN, VOLKER., 7310 PLOCHINGEN
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Prodn. of a semiconductor diode contg. a series of epitaxially formed layers of n-GaAs - n - GaHAs - GaAs - p - GaHAs - p - GaAs is improved by forming a supernumerary layer, pref. GaAlAs, and finally etching it away, pref. with hydrochloric acid. By this method, the formation of the p - GaAs layer which must be very thin (0.005 mm) is facilitated, compared with the conventional method of allowing it to grow thicker and then grinding to the required thickness.