Ohmic contacts for semiconductors - with highly doped silicon layer to prevent contamination

Ohmic contacts for semiconductors - with highly doped silicon layer to prevent contamination

Ohmic contact for semiconductor cpds. of the III-V and IV-IV gps. comprises a layer of highly doped and amorphous Si on the part of the surface of the undoped material for which the contact is required, no enrichment zone being necessary. This type of contact is resistant to relatively high temps. a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: DAVID MILLS III,BLAKE, WILLIAM BOLAND,BERNARD
Format: Patent
Sprache:eng ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Ohmic contact for semiconductor cpds. of the III-V and IV-IV gps. comprises a layer of highly doped and amorphous Si on the part of the surface of the undoped material for which the contact is required, no enrichment zone being necessary. This type of contact is resistant to relatively high temps. and avoids releasing an impurity of the semiconductor material.