DE2203123

DE2203123

A process for the gettering of semi-conductors wherein the semi-conductors are placed between and in contact with solid bodies selected from the group consisting of quartz glass, silicon nitride and boron nitride which are then heated to a gettering temperature preferably between 1,000 DEG C and 1,2...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SCHWEITZER, SAMUEL., BIRR, ZIFFERMAYER, GEORG, WETTINGEN
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:A process for the gettering of semi-conductors wherein the semi-conductors are placed between and in contact with solid bodies selected from the group consisting of quartz glass, silicon nitride and boron nitride which are then heated to a gettering temperature preferably between 1,000 DEG C and 1,200 DEG C. The heating is preferably carried out under a vacuum or in the presence of an inert atmosphere. When boron nitride is used for the solid bodies, the process can serve simultaneously for also producing the desired doping characteristic within the semi-conductor.