Verfahren zum Herstellen einer elektrischen Isolationsschicht

The present invention relates to a method of forming a thin stratified pinhole-free silicon dioxide insulator layer between multilevel conductors. Silicon dioxide films within the stratified pinhole-free silicon dioxide insulator layer are made from single drops of colloidal silicon dioxide liquid dispersion. These silicon dioxide films are stacked to form a stratified pinhole-free highly insulative silicon dioxide layer between the upper and lower conductors. The thinness of the stratified pinhole-free silicon dioxide insulator layer allows shallow contact windows to be formed therein. A shallow contact window allows reliable electrical contact therethrough between an upper conductor and a lower conductor.