Verfahren zur Herstellung eines tiefen flaschenförmigen Graben-Kondensators

Production of a deep trench capacitor comprises preparing a substrate having a hard mask layer and an insulating layer; patterning the mask layer and the insulating layer to form a trench with side walls; forming an insulating layer within the trench; forming an intermediate layer made of hard metal...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SHIAO, J. S, YEN, WEN-PING
Format: Patent
Sprache:ger
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Beschreibung
Zusammenfassung:Production of a deep trench capacitor comprises preparing a substrate having a hard mask layer and an insulating layer; patterning the mask layer and the insulating layer to form a trench with side walls; forming an insulating layer within the trench; forming an intermediate layer made of hard metal on the side walls; removing the insulating layer; forming a doping layer; thermally treating to form a doped region in the substrate, the doped region acting as a storage electrode; forming a dielectric capacitor layer above the storage electrode; forming a first conducting layer to fill the trench and forming a second conducting layer above the first conducting layer.