Verfahren zur Herstellung eines tiefen flaschenförmigen Graben-Kondensators
Production of a deep trench capacitor comprises preparing a substrate having a hard mask layer and an insulating layer; patterning the mask layer and the insulating layer to form a trench with side walls; forming an insulating layer within the trench; forming an intermediate layer made of hard metal...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | ger |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Production of a deep trench capacitor comprises preparing a substrate having a hard mask layer and an insulating layer; patterning the mask layer and the insulating layer to form a trench with side walls; forming an insulating layer within the trench; forming an intermediate layer made of hard metal on the side walls; removing the insulating layer; forming a doping layer; thermally treating to form a doped region in the substrate, the doped region acting as a storage electrode; forming a dielectric capacitor layer above the storage electrode; forming a first conducting layer to fill the trench and forming a second conducting layer above the first conducting layer. |
---|