Element mit elektrisch einstellbarer Oberflächenemissivität für Infrarotstrahlung

The invention relates to an element with electrically controllable surface emissivity for infrared radiation at wavelengths of between 1 mu m and 30 mu m, which consists of the following layers: a front substrate (6) transparent to infrared radiation; a functional layer (5) whose reflectivity for in...

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Bibliographische Detailangaben
Hauptverfasser:	ORTLEPP, KATRIN, LEUPOLZ, ANDREAS, SCHERBER, WERNER, ROTHMUND, WALTER, GOLLY, MONIKA
Format:	Patent
Sprache:	ger
Schlagworte:	AIRCRAFT ARMOUR ARMOURED OR ARMED VEHICLES ARMOURED TURRETS AVIATION BLASTING COSMONAUTICS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING FREQUENCY-CHANGING HEATING LIGHTING MEANS OF ATTACK OR DEFENCE, e.g. CAMOUFLAGE, IN GENERAL MECHANICAL ENGINEERING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PERFORMING OPERATIONS PHYSICS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF TRANSPORTING VEHICLES OR EQUIPMENT THEREFOR WEAPONS
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Beschreibung
Zusammenfassung:	The invention relates to an element with electrically controllable surface emissivity for infrared radiation at wavelengths of between 1 mu m and 30 mu m, which consists of the following layers: a front substrate (6) transparent to infrared radiation; a functional layer (5) whose reflectivity for infrared radiation can be modified by the incorporation of hydrogen; an anhydrous, infrared-absorbing proton-conducting layer (4); a hydrogen storage layer (3); and an electrode layer (2). Die Erfindung betrifft ein Element mit elektrisch einstellbarer Oberflächenemissivität für Infrarotstrahlung der Wellenlänge 1 mum bis 30 mum, mit folgendem Schichtaufbau: DOLLAR A - vorderes, IR-transparentes Substrat (6); DOLLAR A - Funktionsschicht (5), deren Reflektivität für IR-Strahlung durch Einlagerung von Wasserstoff geändert werden kann; DOLLAR A - wasserfreie, IR-absorptive Protonenleiterschicht (4); DOLLAR A - Wasserstoffspeicherschicht (3); DOLLAR A - Elektrodenschicht (2).