Semiconductor component with high performance, output transistor chip on semiconductor substrate

Semiconductor component with high performance, output transistor chip on semiconductor substrate

The gate electrodes (6) of each transistor cell are coupled to a gate bus (8), the drain electrodes (1) are linked to a drain contact point (10), and the source electrodes (2) are coupled to a source contact point (4), the drain and source electrodes are alternately arranged opposite each other over...

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Bibliographische Detailangaben
Hauptverfasser: KOMARU, MAKIO, TOKIO/TOKYL, JP, UDOMOTO, JUNICHI, TOKIO/TOKYO, JP
Format: Patent
Sprache:eng ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The gate electrodes (6) of each transistor cell are coupled to a gate bus (8), the drain electrodes (1) are linked to a drain contact point (10), and the source electrodes (2) are coupled to a source contact point (4), the drain and source electrodes are alternately arranged opposite each other over the gate electrodes. (P) A resistor (9) comprises a part of the gate bus between the transistor cells to prevent an oscillation occurring between adjacent transistor cells.