Thyristor with isolated gate

Thyristor with isolated gate

The thyristor has a base layer of a first conducting type with a high specific resistance, first and second base zones of a second type in a first main area of the base layer, source zones of the first type in the first base zone, an emitter zone of the first type in the second base zone, a gate ele...

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Bibliographische Detailangaben
Hauptverfasser: HARADA, YUICHI, KAWASAKI, JP, IWAANA, TADAYOSHI, KAWASAKI, JP, IWAMURO, NORIYUKI, KAWASAKI, JP
Format: Patent
Sprache:eng ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The thyristor has a base layer of a first conducting type with a high specific resistance, first and second base zones of a second type in a first main area of the base layer, source zones of the first type in the first base zone, an emitter zone of the first type in the second base zone, a gate electrode, two main electrodes, an emitter layer, a gate electrode, and an insulating film. The insulating film covers the surfaces of the second base zone and the emitter zone. A free surface area (20) of the first base zone (4) between the base layer (3) and source zone (7) is narrower than a free surface area (30) of the second base zone (6) between the base layer and the emitter zone (8).