Susceptor for fast thermo-processing of semiconductor substrate
The susceptor comprises a base (10) with a flat surface (18) and a vertical, peripheral side wall (13), surrounding the surface working region (14) which, together with the side wall, defines a cavity. There are numerous contact points (20), extending from the working region into the cavity in such...
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| Format: | Patent |
| Sprache: | eng ; ger |
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| Zusammenfassung: | The susceptor comprises a base (10) with a flat surface (18) and a vertical, peripheral side wall (13), surrounding the surface working region (14) which, together with the side wall, defines a cavity. There are numerous contact points (20), extending from the working region into the cavity in such an arrangement as to support a semiconductor wafer (21) forming the substrate. The side wall can support a cover for closing and/or surrounding the cavity. The contact points have a base of 0.025 inches in cross-section. |
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