Non-active ion implantation in semiconductor device production

A semiconductor device production process involves introducing non-active ions into a first conductivity type substrate (21) to form amorphous regions (26), producing first conductivity type first impurity regions (28) near the amorphous regions and producing second conductivity type second impurity regions (30) in the amorphous regions. Preferably, the implanted non-active ions assume an atomic or molecular state in which they act neither as acceptors nor donors and are selected from one or more of argon, germanium, silicon, fluorine and nitrogen ions, the ions being implanted at an inclination angle of 0-60 deg , an energy of 5-500 keV and a dose of 1\*10 to 1\*10 ions/cm .