Power switching thyristor with insulated gate

Power switching thyristor with insulated gate

The thyristor includes base zones (4,6) formed in selected sections of base layers (3) surface, under which is formed a trough zone (5). The second base zone (6) contains a first conductivity source zone (7), while another section contains a first conductivity emitter zone (8). A gate electrode laye...

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Hauptverfasser: IWAANA, TADAYOSHI, KAWASAKI, JP, HARADA, YUICHI, KAWASAKI, JP, IWAMURO, NORIYUKI, KAWASAKI, JP
Format: Patent
Sprache:eng ; ger
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator IWAANA, TADAYOSHI, KAWASAKI, JP
HARADA, YUICHI, KAWASAKI, JP
IWAMURO, NORIYUKI, KAWASAKI, JP
description The thyristor includes base zones (4,6) formed in selected sections of base layers (3) surface, under which is formed a trough zone (5). The second base zone (6) contains a first conductivity source zone (7), while another section contains a first conductivity emitter zone (8). A gate electrode layer is deposited on an insulating film (9) over the first base zone (4), an exposed section of the base layer, and a surface of the second base zone. A main electrode (11) contacts free sections of first base and source zones. A second conductivity emitter layer (1) is deposited o second main face of the base layer and is contacted by a second main electrode (12). A gate electrode (13) contacts the gate electrode layer.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Power switching thyristor with insulated gate
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