Power switching thyristor with insulated gate

The thyristor includes base zones (4,6) formed in selected sections of base layers (3) surface, under which is formed a trough zone (5). The second base zone (6) contains a first conductivity source zone (7), while another section contains a first conductivity emitter zone (8). A gate electrode layer is deposited on an insulating film (9) over the first base zone (4), an exposed section of the base layer, and a surface of the second base zone. A main electrode (11) contacts free sections of first base and source zones. A second conductivity emitter layer (1) is deposited o second main face of the base layer and is contacted by a second main electrode (12). A gate electrode (13) contacts the gate electrode layer.