Semiconductor pressure sensor for absolute pressure measurement

The pressure sensor has a number of pressure detecting electrostatic capacitances and a reference electrostatic capacitance, formed on the opposite sides of a single silicon chip. Each of the pressure detecting electrostatic capacitances has a movable electrode provided by a pressure-sensitive membr...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: NAKAZAWA, TERUMI, IBARAKI, JP, SHIMADA, SATOSHI, HITACHI, IBARAKI, JP, MATSUMOTO, MASAHIRO, HITACHI, IBARAKI, JP, SAITO, AKIHIKO, HITACHI, IBARAKI, JP, HANZAWA, KEIJI, MITO, IBARAKI, JP, SUZUKI, SEIKOU, HITACHIOTA, IBARAKI, JP, ICHIKAWA, NORIO, MITO, IBARAKI, JP, MIYAZAKI, ATSUSHI, MITO, IBARAKI, JP
Format: Patent
Sprache:eng ; ger
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator NAKAZAWA, TERUMI, IBARAKI, JP
SHIMADA, SATOSHI, HITACHI, IBARAKI, JP
MATSUMOTO, MASAHIRO, HITACHI, IBARAKI, JP
SAITO, AKIHIKO, HITACHI, IBARAKI, JP
HANZAWA, KEIJI, MITO, IBARAKI, JP
SUZUKI, SEIKOU, HITACHIOTA, IBARAKI, JP
ICHIKAWA, NORIO, MITO, IBARAKI, JP
MIYAZAKI, ATSUSHI, MITO, IBARAKI, JP
description The pressure sensor has a number of pressure detecting electrostatic capacitances and a reference electrostatic capacitance, formed on the opposite sides of a single silicon chip. Each of the pressure detecting electrostatic capacitances has a movable electrode provided by a pressure-sensitive membrane (1210) with a central region (1210A) which is displaced relative to a peripheral region. The change in capacitance in the pressure capacitance units provides an absolute pressure value. The change occurring in the other unit provides an atmosphere pressure value. The change in the capacitance in the reference unit provides a temperature value.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_DE19743749A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>DE19743749A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_DE19743749A13</originalsourceid><addsrcrecordid>eNrjZLAPTs3NTM7PSylNLskvUigoSi0uLi1KVShOzSsG8tOAODGpOD-ntCQVIZmbmgiic1PzSngYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSbyLq6GluYmxuYmlo6ExMWoAIMoyJw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor pressure sensor for absolute pressure measurement</title><source>esp@cenet</source><creator>NAKAZAWA, TERUMI, IBARAKI, JP ; SHIMADA, SATOSHI, HITACHI, IBARAKI, JP ; MATSUMOTO, MASAHIRO, HITACHI, IBARAKI, JP ; SAITO, AKIHIKO, HITACHI, IBARAKI, JP ; HANZAWA, KEIJI, MITO, IBARAKI, JP ; SUZUKI, SEIKOU, HITACHIOTA, IBARAKI, JP ; ICHIKAWA, NORIO, MITO, IBARAKI, JP ; MIYAZAKI, ATSUSHI, MITO, IBARAKI, JP</creator><creatorcontrib>NAKAZAWA, TERUMI, IBARAKI, JP ; SHIMADA, SATOSHI, HITACHI, IBARAKI, JP ; MATSUMOTO, MASAHIRO, HITACHI, IBARAKI, JP ; SAITO, AKIHIKO, HITACHI, IBARAKI, JP ; HANZAWA, KEIJI, MITO, IBARAKI, JP ; SUZUKI, SEIKOU, HITACHIOTA, IBARAKI, JP ; ICHIKAWA, NORIO, MITO, IBARAKI, JP ; MIYAZAKI, ATSUSHI, MITO, IBARAKI, JP</creatorcontrib><description>The pressure sensor has a number of pressure detecting electrostatic capacitances and a reference electrostatic capacitance, formed on the opposite sides of a single silicon chip. Each of the pressure detecting electrostatic capacitances has a movable electrode provided by a pressure-sensitive membrane (1210) with a central region (1210A) which is displaced relative to a peripheral region. The change in capacitance in the pressure capacitance units provides an absolute pressure value. The change occurring in the other unit provides an atmosphere pressure value. The change in the capacitance in the reference unit provides a temperature value.</description><edition>6</edition><language>eng ; ger</language><subject>MEASURING ; MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE ; PHYSICS ; TESTING</subject><creationdate>1998</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19980409&amp;DB=EPODOC&amp;CC=DE&amp;NR=19743749A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25568,76551</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19980409&amp;DB=EPODOC&amp;CC=DE&amp;NR=19743749A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAKAZAWA, TERUMI, IBARAKI, JP</creatorcontrib><creatorcontrib>SHIMADA, SATOSHI, HITACHI, IBARAKI, JP</creatorcontrib><creatorcontrib>MATSUMOTO, MASAHIRO, HITACHI, IBARAKI, JP</creatorcontrib><creatorcontrib>SAITO, AKIHIKO, HITACHI, IBARAKI, JP</creatorcontrib><creatorcontrib>HANZAWA, KEIJI, MITO, IBARAKI, JP</creatorcontrib><creatorcontrib>SUZUKI, SEIKOU, HITACHIOTA, IBARAKI, JP</creatorcontrib><creatorcontrib>ICHIKAWA, NORIO, MITO, IBARAKI, JP</creatorcontrib><creatorcontrib>MIYAZAKI, ATSUSHI, MITO, IBARAKI, JP</creatorcontrib><title>Semiconductor pressure sensor for absolute pressure measurement</title><description>The pressure sensor has a number of pressure detecting electrostatic capacitances and a reference electrostatic capacitance, formed on the opposite sides of a single silicon chip. Each of the pressure detecting electrostatic capacitances has a movable electrode provided by a pressure-sensitive membrane (1210) with a central region (1210A) which is displaced relative to a peripheral region. The change in capacitance in the pressure capacitance units provides an absolute pressure value. The change occurring in the other unit provides an atmosphere pressure value. The change in the capacitance in the reference unit provides a temperature value.</description><subject>MEASURING</subject><subject>MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1998</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAPTs3NTM7PSylNLskvUigoSi0uLi1KVShOzSsG8tOAODGpOD-ntCQVIZmbmgiic1PzSngYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSbyLq6GluYmxuYmlo6ExMWoAIMoyJw</recordid><startdate>19980409</startdate><enddate>19980409</enddate><creator>NAKAZAWA, TERUMI, IBARAKI, JP</creator><creator>SHIMADA, SATOSHI, HITACHI, IBARAKI, JP</creator><creator>MATSUMOTO, MASAHIRO, HITACHI, IBARAKI, JP</creator><creator>SAITO, AKIHIKO, HITACHI, IBARAKI, JP</creator><creator>HANZAWA, KEIJI, MITO, IBARAKI, JP</creator><creator>SUZUKI, SEIKOU, HITACHIOTA, IBARAKI, JP</creator><creator>ICHIKAWA, NORIO, MITO, IBARAKI, JP</creator><creator>MIYAZAKI, ATSUSHI, MITO, IBARAKI, JP</creator><scope>EVB</scope></search><sort><creationdate>19980409</creationdate><title>Semiconductor pressure sensor for absolute pressure measurement</title><author>NAKAZAWA, TERUMI, IBARAKI, JP ; SHIMADA, SATOSHI, HITACHI, IBARAKI, JP ; MATSUMOTO, MASAHIRO, HITACHI, IBARAKI, JP ; SAITO, AKIHIKO, HITACHI, IBARAKI, JP ; HANZAWA, KEIJI, MITO, IBARAKI, JP ; SUZUKI, SEIKOU, HITACHIOTA, IBARAKI, JP ; ICHIKAWA, NORIO, MITO, IBARAKI, JP ; MIYAZAKI, ATSUSHI, MITO, IBARAKI, JP</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_DE19743749A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; ger</language><creationdate>1998</creationdate><topic>MEASURING</topic><topic>MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>NAKAZAWA, TERUMI, IBARAKI, JP</creatorcontrib><creatorcontrib>SHIMADA, SATOSHI, HITACHI, IBARAKI, JP</creatorcontrib><creatorcontrib>MATSUMOTO, MASAHIRO, HITACHI, IBARAKI, JP</creatorcontrib><creatorcontrib>SAITO, AKIHIKO, HITACHI, IBARAKI, JP</creatorcontrib><creatorcontrib>HANZAWA, KEIJI, MITO, IBARAKI, JP</creatorcontrib><creatorcontrib>SUZUKI, SEIKOU, HITACHIOTA, IBARAKI, JP</creatorcontrib><creatorcontrib>ICHIKAWA, NORIO, MITO, IBARAKI, JP</creatorcontrib><creatorcontrib>MIYAZAKI, ATSUSHI, MITO, IBARAKI, JP</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NAKAZAWA, TERUMI, IBARAKI, JP</au><au>SHIMADA, SATOSHI, HITACHI, IBARAKI, JP</au><au>MATSUMOTO, MASAHIRO, HITACHI, IBARAKI, JP</au><au>SAITO, AKIHIKO, HITACHI, IBARAKI, JP</au><au>HANZAWA, KEIJI, MITO, IBARAKI, JP</au><au>SUZUKI, SEIKOU, HITACHIOTA, IBARAKI, JP</au><au>ICHIKAWA, NORIO, MITO, IBARAKI, JP</au><au>MIYAZAKI, ATSUSHI, MITO, IBARAKI, JP</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor pressure sensor for absolute pressure measurement</title><date>1998-04-09</date><risdate>1998</risdate><abstract>The pressure sensor has a number of pressure detecting electrostatic capacitances and a reference electrostatic capacitance, formed on the opposite sides of a single silicon chip. Each of the pressure detecting electrostatic capacitances has a movable electrode provided by a pressure-sensitive membrane (1210) with a central region (1210A) which is displaced relative to a peripheral region. The change in capacitance in the pressure capacitance units provides an absolute pressure value. The change occurring in the other unit provides an atmosphere pressure value. The change in the capacitance in the reference unit provides a temperature value.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; ger
recordid cdi_epo_espacenet_DE19743749A1
source esp@cenet
subjects MEASURING
MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE
PHYSICS
TESTING
title Semiconductor pressure sensor for absolute pressure measurement
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-17T12%3A13%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NAKAZAWA,%20TERUMI,%20IBARAKI,%20JP&rft.date=1998-04-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EDE19743749A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true