Semiconductor pressure sensor for absolute pressure measurement

Semiconductor pressure sensor for absolute pressure measurement

The pressure sensor has a number of pressure detecting electrostatic capacitances and a reference electrostatic capacitance, formed on the opposite sides of a single silicon chip. Each of the pressure detecting electrostatic capacitances has a movable electrode provided by a pressure-sensitive membr...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: NAKAZAWA, TERUMI, IBARAKI, JP, SHIMADA, SATOSHI, HITACHI, IBARAKI, JP, MATSUMOTO, MASAHIRO, HITACHI, IBARAKI, JP, SAITO, AKIHIKO, HITACHI, IBARAKI, JP, HANZAWA, KEIJI, MITO, IBARAKI, JP, SUZUKI, SEIKOU, HITACHIOTA, IBARAKI, JP, ICHIKAWA, NORIO, MITO, IBARAKI, JP, MIYAZAKI, ATSUSHI, MITO, IBARAKI, JP
Format: Patent
Sprache:eng ; ger
Schlagworte:
MEASURING
MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE
PHYSICS
TESTING
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Beschreibung
Zusammenfassung:The pressure sensor has a number of pressure detecting electrostatic capacitances and a reference electrostatic capacitance, formed on the opposite sides of a single silicon chip. Each of the pressure detecting electrostatic capacitances has a movable electrode provided by a pressure-sensitive membrane (1210) with a central region (1210A) which is displaced relative to a peripheral region. The change in capacitance in the pressure capacitance units provides an absolute pressure value. The change occurring in the other unit provides an atmosphere pressure value. The change in the capacitance in the reference unit provides a temperature value.