Verfahren und Vorrichtung zur Herstellung elektrisch leitfähiger Durchgänge in Halbleiter-Bauelementen

The invention relates to a method and device for producing electrically conductive continuity in semiconductor components, preferably mounted on a semiconductor, by means of thermomigration, wherein a temperature gradient between two opposing surfaces of the semiconductor component is produced and a...

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Bibliographische Detailangaben
Hauptverfasser:	ARNOLD, RENE, 10178 BERLIN, DE, KUDELLA, FRANK., 12589 BERLIN, DE, KRIEGEL, BERND., 12459 BERLIN, DE
Format:	Patent
Sprache:	ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The invention relates to a method and device for producing electrically conductive continuity in semiconductor components, preferably mounted on a semiconductor, by means of thermomigration, wherein a temperature gradient between two opposing surfaces of the semiconductor component is produced and a conductive dopant is applied on the cooler surface. One surface of the semiconductor is arranged on a cooled sampling and the opposite surface is exposed to heat radiation whose total output and power distribution can be regulated on the surface of the semiconductor. The total output and/or power distribution of the heat radiation is regulated depending on the temperature measured on at least one measuring point on the semiconductor or the semiconductor component.