Vorrichtung und Verfahren zum Zerkleinern von Halbleitermaterial

Cutting up semiconductor material comprises direct current passage by pulsed high voltage application using electrodes which consist of the semiconductor material (preferably silicon) and which are made conductive by heating. Also claimed is the apparatus for carrying out the above process, includin...

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Bibliographische Detailangaben
Hauptverfasser:	KOEPPL, FRANZ., 84567 ERLBACH, DE, FUCHS, PAUL, MATTIGHOFEN, AT
Format:	Patent
Sprache:	ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRUSHING, PULVERISING, OR DISINTEGRATING CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY MILLING GRAIN PERFORMING OPERATIONS PREPARATORY TREATMENT OF GRAIN FOR MILLING PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WORKING CEMENT, CLAY, OR STONE WORKING STONE OR STONE-LIKE MATERIALS
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Beschreibung
Zusammenfassung:	Cutting up semiconductor material comprises direct current passage by pulsed high voltage application using electrodes which consist of the semiconductor material (preferably silicon) and which are made conductive by heating. Also claimed is the apparatus for carrying out the above process, including spaced electrodes (3) having heaters (5).