Electrostatic discharge protection device for CMOS integrated circuit

Electrostatic discharge protection device for CMOS integrated circuit

The device is part of a circuit to which an operational voltage, e.g. positive, is to be applied and it includes an SCR, incorporated between a circuit coupling fin and ground. A resistor, e.g. a JFET, is coupled to the coupling fin for the control of the SCR breakdown voltage. The resistor is contr...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HARRIS, COLIN, NEW WESTMINSTER, BRITISH COLUMBIA, CA, GERSON, BRIAN D., COQUITLAM, BRITISH COLUMBIA, CA, LEBLANC, DAVID, PORT MOODY, BRITISH COLUMBIA, CA, INIEWSKI, KRIS, COQUITLAM, BRITISH COLUMBIA, CA
Format: Patent
Sprache:eng ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The device is part of a circuit to which an operational voltage, e.g. positive, is to be applied and it includes an SCR, incorporated between a circuit coupling fin and ground. A resistor, e.g. a JFET, is coupled to the coupling fin for the control of the SCR breakdown voltage. The resistor is controllable to high value, when the operational voltage is not applied. Thus the SCR is so controlled that it breaks down at a low electrostatic discharge voltage, lower than the circuit damaging voltage on operational voltage application to a low resistive value. The SCR is so controlled that it breaks down at an electrostatic discharge voltage higher than the low electrostatic discharge voltage.