Oxidising and doping silicon surfaces

Oxidising and doping silicon surfaces

Process for oxidising and doping silicon surfaces by electrochemical treatment is claimed in which the non-metal substrate is anodically treated using a (plasma)chemical process with spark discharge in a molten salt using a monopolar impulse voltage of 2-500 Hz at an average current density of 0.02-...

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Hauptverfasser: KRYSMANN, WALDEMAR.NAT, HOENICKE, DIETER, DR
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Sprache:eng ; ger
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APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROFORMING
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
METALLURGY
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS
SEMICONDUCTOR DEVICES
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creator KRYSMANN, WALDEMAR.NAT
HOENICKE, DIETER, DR
description Process for oxidising and doping silicon surfaces by electrochemical treatment is claimed in which the non-metal substrate is anodically treated using a (plasma)chemical process with spark discharge in a molten salt using a monopolar impulse voltage of 2-500 Hz at an average current density of 0.02-0.7 A/cm , and in the exposition time of 1-10 minutes uniform coarse-structured oxide layer systems of 1-10 mu m. thick with open porous surface structure with surface recesses of single structural elements of 1.6 mu m diameter are formed.
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subjects APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROFORMING
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
METALLURGY
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS
SEMICONDUCTOR DEVICES
title Oxidising and doping silicon surfaces
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