Oxidising and doping silicon surfaces

Process for oxidising and doping silicon surfaces by electrochemical treatment is claimed in which the non-metal substrate is anodically treated using a (plasma)chemical process with spark discharge in a molten salt using a monopolar impulse voltage of 2-500 Hz at an average current density of 0.02-...

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Bibliographische Detailangaben
Hauptverfasser:	KRYSMANN, WALDEMAR.NAT, HOENICKE, DIETER, DR
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Process for oxidising and doping silicon surfaces by electrochemical treatment is claimed in which the non-metal substrate is anodically treated using a (plasma)chemical process with spark discharge in a molten salt using a monopolar impulse voltage of 2-500 Hz at an average current density of 0.02-0.7 A/cm , and in the exposition time of 1-10 minutes uniform coarse-structured oxide layer systems of 1-10 mu m. thick with open porous surface structure with surface recesses of single structural elements of 1.6 mu m diameter are formed.