Siliciumkarbidtransistor mit hoher Durchbruchspannung

Siliciumkarbidtransistor mit hoher Durchbruchspannung

A lateral silicon carbide transistor (10) utilizes a modulated channel region (18) to form an accumulation region that facilitates a low on-resistance. A doped region of the channel layer forms a channel insert (14) that also lowers the on-resistance of the transistor (10). A damage termination laye...

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Bibliographische Detailangaben
Hauptverfasser: BHATNAGAR, MOHIT, MESA, ARIZ., US, THERO, CHRISTINE, SCOTTSDALE, ARIZ., US, WEITZEL, CHARLES E., MESA, ARIZ., US
Format: Patent
Sprache:ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A lateral silicon carbide transistor (10) utilizes a modulated channel region (18) to form an accumulation region that facilitates a low on-resistance. A doped region of the channel layer forms a channel insert (14) that also lowers the on-resistance of the transistor (10). A damage termination layer (27) is utilized to facilitate providing a high breakdown voltage. Field plates (23,24) also assists in increasing the breakdown voltage and decreasing the on-resistance of the transistor (10).