MOSFET manufacturing method
The manufacture process starts with doping a substrate (11) region with at least two different dopants of the V group, e.g. n-type dopants. On the doped region is formed a gate while source and drain regions (28`) are formed in the region adjacent to the gate. The Preferred two dopants are phosphoru...
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| Zusammenfassung: | The manufacture process starts with doping a substrate (11) region with at least two different dopants of the V group, e.g. n-type dopants. On the doped region is formed a gate while source and drain regions (28`) are formed in the region adjacent to the gate. The Preferred two dopants are phosphorus and arsenic respectively. Typically phosphorous ions are implanted at a concentration of 1 x 10 to power of 12 to 1 x 10 to power of 13 per square cm, and energy level of 80 to 200 keV. For arsenic ions, the concentration is the same but the energy level is 100 to 200 Kev. |
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