Epitaxial wafer for light-emitting diode

The epitaxial wafer has n-conductive and p-conductive epitaxial layers (1-4; 6,7) forming a pn junction, the epitaxial layers formed from GaAsP with a P of at least 45%, or from GaP. The p-conductive epitaxial layers are provided by a first layer (6) at one side of the pn junction with a carrier con...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	IMAI, MEGUMI, USHIKU, IBARAKI, JP, TAKAHASHI, HITORA, USHIKU, IBARAKI, JP, SATO, TADASHIGE, USHIKU, IBARAKI, JP
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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