Epitaxial wafer for light-emitting diode

Epitaxial wafer for light-emitting diode

The epitaxial wafer has n-conductive and p-conductive epitaxial layers (1-4; 6,7) forming a pn junction, the epitaxial layers formed from GaAsP with a P of at least 45%, or from GaP. The p-conductive epitaxial layers are provided by a first layer (6) at one side of the pn junction with a carrier con...

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Bibliographische Detailangaben
Hauptverfasser: IMAI, MEGUMI, USHIKU, IBARAKI, JP, TAKAHASHI, HITORA, USHIKU, IBARAKI, JP, SATO, TADASHIGE, USHIKU, IBARAKI, JP
Format: Patent
Sprache:eng ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The epitaxial wafer has n-conductive and p-conductive epitaxial layers (1-4; 6,7) forming a pn junction, the epitaxial layers formed from GaAsP with a P of at least 45%, or from GaP. The p-conductive epitaxial layers are provided by a first layer (6) at one side of the pn junction with a carrier conc. of between 0.5 and 5 times 10 to the power 18 per cubic cm and a second surface layer with a carrier conc. of at least 5 times 10 to the power 18 per cubic cm.