Metallisation structure e.g. of liq. crystal device
In a metallisation structure, a first conductive material(14) of indium-tin oxide and a second conductive material (18), pref. of doped silicon are connected by an intermediate body (28) of a conductive material (pref. copper or silver) which forms no oxide with a standard heat of formation in a mor...
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| creator | YAMAMOTO, KENJI, MIYAGI, JP HEBIGUCHI, HIROYUKI, SENDAI, MIYAGI, JP |
| description | In a metallisation structure, a first conductive material(14) of indium-tin oxide and a second conductive material (18), pref. of doped silicon are connected by an intermediate body (28) of a conductive material (pref. copper or silver) which forms no oxide with a standard heat of formation in a more negative region than that of SnO2. Also claimed is a liq. crystal device in which an ohmic contact layer (24) of a thin film transistor and an ITO-contg. pixel electrode (14) are connected by a conductive material which forms no oxide with a standard heat of formation in a more negative region than that of SnO2. |
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Also claimed is a liq. crystal device in which an ohmic contact layer (24) of a thin film transistor and an ITO-contg. pixel electrode (14) are connected by a conductive material which forms no oxide with a standard heat of formation in a more negative region than that of SnO2.</description><edition>6</edition><language>eng ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FREQUENCY-CHANGING ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; NON-LINEAR OPTICS ; OPTICAL ANALOGUE/DIGITAL CONVERTERS ; OPTICAL LOGIC ELEMENTS ; OPTICS ; PHYSICS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><creationdate>1996</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19960620&DB=EPODOC&CC=DE&NR=19546962A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19960620&DB=EPODOC&CC=DE&NR=19546962A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAMAMOTO, KENJI, MIYAGI, JP</creatorcontrib><creatorcontrib>HEBIGUCHI, HIROYUKI, SENDAI, MIYAGI, JP</creatorcontrib><title>Metallisation structure e.g. of liq. crystal device</title><description>In a metallisation structure, a first conductive material(14) of indium-tin oxide and a second conductive material (18), pref. of doped silicon are connected by an intermediate body (28) of a conductive material (pref. copper or silver) which forms no oxide with a standard heat of formation in a more negative region than that of SnO2. Also claimed is a liq. crystal device in which an ohmic contact layer (24) of a thin film transistor and an ITO-contg. pixel electrode (14) are connected by a conductive material which forms no oxide with a standard heat of formation in a more negative region than that of SnO2.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FREQUENCY-CHANGING</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>NON-LINEAR OPTICS</subject><subject>OPTICAL ANALOGUE/DIGITAL CONVERTERS</subject><subject>OPTICAL LOGIC ELEMENTS</subject><subject>OPTICS</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1996</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD2TS1JzMnJLE4syczPUyguKSpNLiktSlVI1UvXU8hPU8jJLNRTSC6qLAYqU0hJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfEuroaWpiZmlmZGjobGxKgBANryLAo</recordid><startdate>19960620</startdate><enddate>19960620</enddate><creator>YAMAMOTO, KENJI, MIYAGI, JP</creator><creator>HEBIGUCHI, HIROYUKI, SENDAI, MIYAGI, JP</creator><scope>EVB</scope></search><sort><creationdate>19960620</creationdate><title>Metallisation structure e.g. of liq. crystal device</title><author>YAMAMOTO, KENJI, MIYAGI, JP ; HEBIGUCHI, HIROYUKI, SENDAI, MIYAGI, JP</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_DE19546962A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; ger</language><creationdate>1996</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FREQUENCY-CHANGING</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>NON-LINEAR OPTICS</topic><topic>OPTICAL ANALOGUE/DIGITAL CONVERTERS</topic><topic>OPTICAL LOGIC ELEMENTS</topic><topic>OPTICS</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</topic><toplevel>online_resources</toplevel><creatorcontrib>YAMAMOTO, KENJI, MIYAGI, JP</creatorcontrib><creatorcontrib>HEBIGUCHI, HIROYUKI, SENDAI, MIYAGI, JP</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAMAMOTO, KENJI, MIYAGI, JP</au><au>HEBIGUCHI, HIROYUKI, SENDAI, MIYAGI, JP</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Metallisation structure e.g. of liq. crystal device</title><date>1996-06-20</date><risdate>1996</risdate><abstract>In a metallisation structure, a first conductive material(14) of indium-tin oxide and a second conductive material (18), pref. of doped silicon are connected by an intermediate body (28) of a conductive material (pref. copper or silver) which forms no oxide with a standard heat of formation in a more negative region than that of SnO2. Also claimed is a liq. crystal device in which an ohmic contact layer (24) of a thin film transistor and an ITO-contg. pixel electrode (14) are connected by a conductive material which forms no oxide with a standard heat of formation in a more negative region than that of SnO2.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
| title | Metallisation structure e.g. of liq. crystal device |
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