Metallisation structure e.g. of liq. crystal device

In a metallisation structure, a first conductive material(14) of indium-tin oxide and a second conductive material (18), pref. of doped silicon are connected by an intermediate body (28) of a conductive material (pref. copper or silver) which forms no oxide with a standard heat of formation in a mor...

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Bibliographische Detailangaben
Hauptverfasser:	YAMAMOTO, KENJI, MIYAGI, JP, HEBIGUCHI, HIROYUKI, SENDAI, MIYAGI, JP
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	In a metallisation structure, a first conductive material(14) of indium-tin oxide and a second conductive material (18), pref. of doped silicon are connected by an intermediate body (28) of a conductive material (pref. copper or silver) which forms no oxide with a standard heat of formation in a more negative region than that of SnO2. Also claimed is a liq. crystal device in which an ohmic contact layer (24) of a thin film transistor and an ITO-contg. pixel electrode (14) are connected by a conductive material which forms no oxide with a standard heat of formation in a more negative region than that of SnO2.