Photo injection type semiconductor solid state solar energy cell

The photo injection cell has a laminate structure with a substrate base (4) and low impedance collector (3), charge transfer (2), and a photoemitter (1) layers. The collector layer, e.g. of Gd, which lies on the substrate, is of 100 nm to 1000 nm thickness and has a 2-4 eV work function. The charge...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	SCHMIDT, MANFRED. DR., 10369 BERLIN, DE, FENSKE, FRANK. DR., 13055 BERLIN, DE, ELLMER, KLAUS. DR., 12683 BERLIN, DE, BRAUER, MANFRED. DR., 10439 BERLIN, DE, FLIETNER, HANS, .. DR., 12489 BERLIN, DE
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The photo injection cell has a laminate structure with a substrate base (4) and low impedance collector (3), charge transfer (2), and a photoemitter (1) layers. The collector layer, e.g. of Gd, which lies on the substrate, is of 100 nm to 1000 nm thickness and has a 2-4 eV work function. The charge transfer layer, e.g. a semiconductor or insulator, is of 50 to 1000 nm thick and has an energy gap of 2-4 eV. The photoemitter layer, e.g. of Au, is highly absorbing with a thickness of 5 nm to 50nm and a work function of 3-5 eV. Incident light on the photo emitter layer produces charge carriers which overcome the barrier and are injected into the charge transfer layer to diffuse in the collector layer. The isotropic quasi elastic scatter rate of the photoemitter is greater than that of the inelastic scatter process, while its thickness is of the same order as that of the free path length of the inelastic scattered process.