Doping semiconductor crystals, esp. silicon@ crystals

Doping semiconductor crystals comprises contacting a crystalline body, pretreated by ion implantation, with a medium contg. electrically active dopant or several dopants, treating at temp. below the recrystallisation temp., and then tempering for a short time at a sufficiently elevated temp. to recr...

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Hauptverfasser: BAUMANN, KURT., 14513 TELTOW, DE, JACOB, KERSTIN., 12524 BERLIN, DE, LEIHKAUF, RAINER., 10249 BERLIN, DE, MOHR, ULRICH, DR., 14532 KLEINMACHNOW, DE, BORN, KIRSTEN, 12683 BERLIN, DE
Format: Patent
Sprache:eng ; ger
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Zusammenfassung:Doping semiconductor crystals comprises contacting a crystalline body, pretreated by ion implantation, with a medium contg. electrically active dopant or several dopants, treating at temp. below the recrystallisation temp., and then tempering for a short time at a sufficiently elevated temp. to recrystallise and electrically activated.