Solarzelle und Verfahren zu ihrer Herstellung
1,244,812. Semiconductor devices. SIEMENS A.G. 18 March, 1970 [20 March, 1969], No. 12944/70. Heading H1K. A semi-conductor device, which may be a silicon solar cell comprises a weakly doped body into which is diffused a highly doped region of the same conductivity type, and subsequently a dopant of...
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Zusammenfassung: | 1,244,812. Semiconductor devices. SIEMENS A.G. 18 March, 1970 [20 March, 1969], No. 12944/70. Heading H1K. A semi-conductor device, which may be a silicon solar cell comprises a weakly doped body into which is diffused a highly doped region of the same conductivity type, and subsequently a dopant of the opposite conductivity is diffused into exactly the same region so that the PN junction thus formed substantially coincides with the junction between the weakly doped and highly doped regions of the body. The dopants may be boron and phosphorus. The depth of the highly doped surface region may be between 0À1 Á and 0À4 Á. |
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