DE1813551

DE1813551

A high-frequency transistor of planar structure having emitter and base regions of extremely fine structure to reduce the junction capacity. For the wire bond connection between said emitter or base region and an external lead wire, the transistor has the aluminium electrodes which swell and extend...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: OKUMURA, TOMISABURO, MATSUO, TAKATOSHI
Format: Patent
Sprache:eng
Schlagworte:
ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM
BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
ORGANIC CHEMISTRY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A high-frequency transistor of planar structure having emitter and base regions of extremely fine structure to reduce the junction capacity. For the wire bond connection between said emitter or base region and an external lead wire, the transistor has the aluminium electrodes which swell and extend on the insulating film.