Verfahren zum Herstellen von elektrolumineszenten Gallium-Phosphid-Dioden
GaP is epitaxially deposited from a solution of GaP in Ga on to a highly polished surface of a GaP substrate. In the embodiment the substrate is placed in a quartz boat together with a mixture of Ga and GaP. The boat is heated to 800-1200 DEG C. (preferably 1150 DEG C.) in an atmosphere of N2 + H2 t...
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| creator | RUDOLPH LORENZ,MAX MORRIS FOSTER,LUTHER JOSEPH BUSZKO,LEONARD |
| description | GaP is epitaxially deposited from a solution of GaP in Ga on to a highly polished surface of a GaP substrate. In the embodiment the substrate is placed in a quartz boat together with a mixture of Ga and GaP. The boat is heated to 800-1200 DEG C. (preferably 1150 DEG C.) in an atmosphere of N2 + H2 to melt and homogenize the mixture and thus to form a solution of GaP in Ga. The furnace containing the boat is tilted to cause the solution to flow over the GaP substrate, and the temperature is maintained for 5 minutes, after which the arrangement is cooled slowly to 700 DEG C., then more rapidly to room temperature. Excess Ga is lapped and etched away. |
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In the embodiment the substrate is placed in a quartz boat together with a mixture of Ga and GaP. The boat is heated to 800-1200 DEG C. (preferably 1150 DEG C.) in an atmosphere of N2 + H2 to melt and homogenize the mixture and thus to form a solution of GaP in Ga. The furnace containing the boat is tilted to cause the solution to flow over the GaP substrate, and the temperature is maintained for 5 minutes, after which the arrangement is cooled slowly to 700 DEG C., then more rapidly to room temperature. Excess Ga is lapped and etched away.</description><language>ger</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1970</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19700226&DB=EPODOC&CC=DE&NR=1589196A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19700226&DB=EPODOC&CC=DE&NR=1589196A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RUDOLPH LORENZ,MAX</creatorcontrib><creatorcontrib>MORRIS FOSTER,LUTHER</creatorcontrib><creatorcontrib>JOSEPH BUSZKO,LEONARD</creatorcontrib><title>Verfahren zum Herstellen von elektrolumineszenten Gallium-Phosphid-Dioden</title><description>GaP is epitaxially deposited from a solution of GaP in Ga on to a highly polished surface of a GaP substrate. In the embodiment the substrate is placed in a quartz boat together with a mixture of Ga and GaP. The boat is heated to 800-1200 DEG C. (preferably 1150 DEG C.) in an atmosphere of N2 + H2 to melt and homogenize the mixture and thus to form a solution of GaP in Ga. The furnace containing the boat is tilted to cause the solution to flow over the GaP substrate, and the temperature is maintained for 5 minutes, after which the arrangement is cooled slowly to 700 DEG C., then more rapidly to room temperature. 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In the embodiment the substrate is placed in a quartz boat together with a mixture of Ga and GaP. The boat is heated to 800-1200 DEG C. (preferably 1150 DEG C.) in an atmosphere of N2 + H2 to melt and homogenize the mixture and thus to form a solution of GaP in Ga. The furnace containing the boat is tilted to cause the solution to flow over the GaP substrate, and the temperature is maintained for 5 minutes, after which the arrangement is cooled slowly to 700 DEG C., then more rapidly to room temperature. Excess Ga is lapped and etched away.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Verfahren zum Herstellen von elektrolumineszenten Gallium-Phosphid-Dioden |
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