Verfahren zum Herstellen von elektrolumineszenten Gallium-Phosphid-Dioden

GaP is epitaxially deposited from a solution of GaP in Ga on to a highly polished surface of a GaP substrate. In the embodiment the substrate is placed in a quartz boat together with a mixture of Ga and GaP. The boat is heated to 800-1200 DEG C. (preferably 1150 DEG C.) in an atmosphere of N2 + H2 t...

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Bibliographische Detailangaben
Hauptverfasser:	RUDOLPH LORENZ,MAX, MORRIS FOSTER,LUTHER, JOSEPH BUSZKO,LEONARD
Format:	Patent
Sprache:	ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	GaP is epitaxially deposited from a solution of GaP in Ga on to a highly polished surface of a GaP substrate. In the embodiment the substrate is placed in a quartz boat together with a mixture of Ga and GaP. The boat is heated to 800-1200 DEG C. (preferably 1150 DEG C.) in an atmosphere of N2 + H2 to melt and homogenize the mixture and thus to form a solution of GaP in Ga. The furnace containing the boat is tilted to cause the solution to flow over the GaP substrate, and the temperature is maintained for 5 minutes, after which the arrangement is cooled slowly to 700 DEG C., then more rapidly to room temperature. Excess Ga is lapped and etched away.