Schnellspeicher mit duennen Schichten

1,170,703. Magnetic storage apparatus. UNITED-CARR Inc. 23 Jan., 1968 [26 Jan., 1967], No. 3432/68. Heading H3B. In a thin film magnetic memory the drive lines and sense lines are terminated by a plurality of thin film resistor elements. A rectangular substrate having a polished metallic surface or a solid metal substrate has a plurality of uniaxial anisotropic magnetic film elements 6 formed thereon. A predetermined area of the board is then coated with a thin insulating layer 8 to leave a border of the ground plane exposed. Digit, sense and word line resistors 12, 10, 14 are electrolessly deposited with a portion of each resistor on the insulating layer 8 and the remaining portion on the ground plane or substrate. A second insulating layer 16 is placed over the exposed ground plane and over approximately two-thirds of each resistor, Fig. 5, and then a series of vertical word lines (not shown) are deposited on the first insulating layer 8, extending horizontally on top of the exposed portions of the word resistors 14 and on to the second insulating layer 16. After a cross-over insulating layer has been deposited over the word lines and the exposed portions of the resistors 14 leaving a portion of the word lines free at one end for external connections and not extending as far as the exposed resistors 10, 12 on the left-hand side of the substrate, pairs of digit and sense lines are deposited at right angles to the word lines to engage the respective resistors 10, 12. The resistors 10, 12 and 14 form matching terminators to the impedance of the drive lines.