DE1541413

DE1541413

1,158,900. Photo-electric detectors. INTERNATIONAL BUSINESS MACHINES CORP. Dec.13, 1966 [Jan.17, 1966], No.55780/66. Heading G1A. [Also in Divisions H1 and H3] The threshold field at which Gunn Effect oscillations arise is controlled by means such as a source of radiation 78 or a field effect gate c...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: LANDAUER, ROLF WILLIAM, BRIARCLIFF MANOR, N.Y. (V.ST.A.)
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
GENERATION OF NOISE BY SUCH CIRCUITS
GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING,BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN ANON-SWITCHING MANNER
PULSE TECHNIQUE
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:1,158,900. Photo-electric detectors. INTERNATIONAL BUSINESS MACHINES CORP. Dec.13, 1966 [Jan.17, 1966], No.55780/66. Heading G1A. [Also in Divisions H1 and H3] The threshold field at which Gunn Effect oscillations arise is controlled by means such as a source of radiation 78 or a field effect gate contact 110, Fig. 8A (not shown) which introduces extra charge carries into the semi-conductor. Such semi-conductor 12, e.g. Ga As or IP, may be so deficient in charge carries that only in the presence of the radiation (e.g. light) or a suitable potential on the gate electrode are sufficient carriers injected to enable the Gunn Effect to arise. It is also possible to employ both the field effect and radiation-operated mechanisms in conjunction, e.g. by using a field effect device structure in which the gate electrode contacts an insulating layer on the semi-conductor body, this layer being made transparent to the radiation.