VERFAHREN ZUR HERSTELLUNG EINER HALBLEITERANORDNUNG UND HALBLEITERANORDNUNG

The invention relates to a method for producing a semiconductor assembly, comprising the steps: providing a functional layer stack comprising a carrier substrate, a first layer of a first conductivity type arranged on the carrier substrate, a second layer of a second conductivity type arranged on the first layer, and an active zone lying between the first and second layers; forming an electrically conductive nanowire layer, at least in regions, on a side of the second layer facing away from the carrier substrate; forming a structured sacrificial layer on the nanowire layer with at least one opening, wherein the at least one opening extends at least through the sacrificial layer and at least partially through the nanowire layer; forming a support layer on the structured sacrificial layer, wherein the support layer is arranged at least partially in the least one opening; structuring the functional layer stack, in order to create at least one semiconductor component such that at least one recess is formed by the functional layer stack; and removing the sacrificial layer such that a cavity is formed between the at least one semiconductor component and the support layer, and the nanowire layer is at least partially exposed.