OBERFLÄCHENEMITTIERENDER HALBLEITERLASER UND VERFAHREN ZUR HERSTELLUNG EINES OBERFLÄCHENEMITTIERENDEN HALBLEITERLASERS

The invention relates to a surface-emitting semiconductor laser, including a first semiconductor layer of a first conductivity type, the first semiconductor layer being structured forming a mesa, an active zone for generating electromagnetic radiation and a second semiconductor layer of a second conductivity type. The first semiconductor layer, the active zone and the second semiconductor layer are arranged on top of one another forming a semiconductor layer stack. The surface-emitting semiconductor laser further comprises a sheath layer which adjoins a lateral wall of the mesa.