OPTOELEKTRONISCHES HALBLEITERELEMENT UND OPTOELEKTRONISCHES BAUELEMENT

The invention relates to an optoelectronic semiconductor element comprising the following features: - a semiconductor chip (1) for generating electromagnetic radiation, which chip has: a radiation decoupling surface (11) via which first electromagnetic radiation (41) is emitted in a first wavelength range during operation; - a conversion layer (2) which is disposed directly on the radiation decoupling surface (11) of the semiconductor chip (1), wherein - the conversion layer (2) completely covers the radiation decoupling surface (11) and has a main surface (21) which is opposite the radiation decoupling surface (11), wherein - the conversion layer (2) comprises at least one luminescent substance which is designed to convert at least a portion of the first electromagnetic radiation (41) into second electromagnetic radiation (42) of a second wavelength range, and wherein - the second wavelength range is different from the first wavelength range; and - an optical feedback element (3) which is disposed directly on the main surface (21) of the conversion layer (2), wherein - the optical feedback element (3) is designed to reflect at least a portion of the first and/or the second electromagnetic radiation, and - the optical feedback element (3) has a multiplicity of openings (31) via which regions of the main surface (21) of the conversion layer (2) are exposed. The invention also relates to an optoelectronic component.