SiC-Epitaxiewafer, Verfahren zum Herstellen eines SiC-Epitaxiewafers, SiC-Vorrichtung und Leistungsumwandlungsgerät

SiC-Epitaxiewafer, Verfahren zum Herstellen eines SiC-Epitaxiewafers, SiC-Vorrichtung und Leistungsumwandlungsgerät

A SiC substrate (1) has an off angle θ°. A SiC epitaxial layer (2) having a film thickness of Tm μm is provided on the SiC substrate (1). Triangular defects (3) are formed on a surface of the SiC epitaxial layer (2). A density of triangular defects (3) having a length of Tm/Tan θ×0.9 or more in a su...

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Bibliographische Detailangaben
Hauptverfasser: Hamano, Kenichi, Ohno, Akihito, Mizobe, Takuma, Kimura, Yasuhiro, Mitani, Yoichiro
Format: Patent
Sprache:ger
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:A SiC substrate (1) has an off angle θ°. A SiC epitaxial layer (2) having a film thickness of Tm μm is provided on the SiC substrate (1). Triangular defects (3) are formed on a surface of the SiC epitaxial layer (2). A density of triangular defects (3) having a length of Tm/Tan θ×0.9 or more in a substrate off direction is denoted by A. A density of triangular (3) defects having a length smaller than Tm/Tan θ×0.9 in the substrate off direction is denoted by B. B/A≤0.5 is satisfied.