Organischer Feldeffekttransistor basierend auf einem löslichen Fullerenderivat
The invention relates to an n-channel field-effect transistor, an ambipolar field effect transistor, and circuits based thereon, said circuits containing soluble fullerene derivatives or a mixture containing said fullerene derivatives as semiconductors. The invention also relates to a method for pro...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | ger |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | The invention relates to an n-channel field-effect transistor, an ambipolar field effect transistor, and circuits based thereon, said circuits containing soluble fullerene derivatives or a mixture containing said fullerene derivatives as semiconductors. The invention also relates to a method for producing such field-effect transistors. |
|---|