Verfahren zur Herstellung einer Halbleiterkomponente mit einer barrierenschichtausgekleideten Öffnung

A semiconductor component having a metallization system that includes a thin conformal multi-layer barrier structure and a method for manufacturing the semiconductor component. A layer of dielectric material is formed over a lower level interconnect. A hardmask is formed over the dielectric layer and an opening is etched through the hardmask into the dielectric layer. The opening is lined with a thin conformal multi-layer barrier using atomic layer deposition. The multi-layer barrier lined opening is filled with an electrically conductive material which is planarized.