Verfahren zur Bestimmung von Korrekturwerten für die Justage eines Halbleiterwafers in einem Projektionsapparat zur photolithographischen Strukturierung einer Metallschicht

The method has the surface of a semiconductor wafer substrate provided with an array of circuit structures, each having adjustment markings (27) at the edges of an exposure field, at least 2 cover surfaces applied to the upper side of the semiconductor wafer (10) so that at least 2 adjustment markin...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	STAECKER, JENS
Format:	Patent
Sprache:	ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The method has the surface of a semiconductor wafer substrate provided with an array of circuit structures, each having adjustment markings (27) at the edges of an exposure field, at least 2 cover surfaces applied to the upper side of the semiconductor wafer (10) so that at least 2 adjustment markings are covered, before deposition of a metal layer (35) on the substrate surface, with subsequent removal of the cover surfaces for allowing the revealed adjustment markings to be used for determining the required correction of the semiconductor wafer position.