Halbleiterwafer mit asymmetrischem Kantenprofil und Herstellungsverfahren hierfür

The wafer has an asymmetric edge profile (EP) extending between inner and outer edge profiles (EPin,EPout). The thickness of the wafer is t and phi1 is an angle between 300 and 850. R is a radius of an arc that defines EPin at a point of intersection with a top surface of the wafer. An angle of inte...

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Bibliographische Detailangaben
Hauptverfasser: KIM, WOO-SEOK, KIM, GI-JUNG, HEO, TAE-YEOL, CHON, SANG-MUN
Format: Patent
Sprache:ger
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Zusammenfassung:The wafer has an asymmetric edge profile (EP) extending between inner and outer edge profiles (EPin,EPout). The thickness of the wafer is t and phi1 is an angle between 300 and 850. R is a radius of an arc that defines EPin at a point of intersection with a top surface of the wafer. An angle of intersection between a bottom surface of the wafer and a line tangential to the arc at a point on EPout is denoted by alpha. An Independent claim is also included for a method of forming a semiconductor wafer.