Verfahren für ein verbessertes epitaktisches Wiederaufwachsen amorpher Polysilizium-CB-Kontakte

Verfahren für ein verbessertes epitaktisches Wiederaufwachsen amorpher Polysilizium-CB-Kontakte

In a method of preparing a DRAM wherein doped poly-Si is used as a CB contact as well as a source of doping in the contact region, and where in amorphous Si is used to fill the CB contact, the improvement of enhancing epitaxial regrowth in amorphous Poly CB contacts, comprising: a) affecting a CB li...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: NINOMIYA, LISA Y, SNAVELY, COLLEEN M, DOBUZINSKY, DAVID M, SARDESAI, VIRAI Y, WANG, YUN YU, IWATAKE, MICHAEL M, MALDEI, MICHAEL, RAMACHARDRAN, RAVIKUMAR, FALTERMEIER, JOHNATHAN, FLAITZ, PHILIP
Format: Patent
Sprache:ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In a method of preparing a DRAM wherein doped poly-Si is used as a CB contact as well as a source of doping in the contact region, and where in amorphous Si is used to fill the CB contact, the improvement of enhancing epitaxial regrowth in amorphous Poly CB contacts, comprising: a) affecting a CB liner reactive ion etch on a substrate to remove SiN and SiO; b) affecting an O plasma clean (in-situ or ex-situ); c) affecting a Huang AB clean; d) affecting a dilute hydrofluoric acid (DHF) clean; e) depositing amorphous Si; and f) annealing to recrystallize and regrow amorphous CB.